SIHFU110 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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SIHFU110 Datasheet PDF : 7 Pages
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IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 10 V
8.3
0.54
2.3
3.8
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR110/SiHFR110)
• Straight Lead (IRFU110/SiHFU110)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR110PbF
SiHFR110-E3
SnPb
IRFR110
SiHFR110
Note
a. See device orientation.
DPAK (TO-252)
IRFR110TRLPbFa
SiHFR110TL-E3a
IRFR110TRLa
SiHFR110TLa
DPAK (TO-252)
IRFR110TRPbFa
SiHFR110T-E3a
IRFR110TRa
SiHFR110Ta
DPAK (TO-252)
IRFR110TRRPbFa
SiHFR110TR-E3a
-
-
IPAK (TO-251)
IRFU110PbF
SiHFU110-E3
IRFU110
SiHFU110
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
LIMIT
100
± 20
4.3
2.7
17
0.20
0.020
100
4.3
2.5
25
2.5
5.5
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
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