IRFR320(2014) 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRFR320 Datasheet PDF : 12 Pages
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IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
e. When mounted on 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.9 A b
VDS = 50 V, ID = 1.9 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A, VDS = 320 V,
see fig. 6 and 13 b
VDD = 200 V, ID = 3.3 A,
Rg = 18 Ω, RD = 56 Ω, see fig. 10 b
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN.
400
-
2.0
-
-
-
-
1.7
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.51
-
V/°C
-
4.0
V
-
± 100 nA
-
25
μA
-
250
-
1.8
Ω
-
-
S
350
-
120
-
pF
47
-
-
20
-
3.3
nC
-
11
10
-
14
-
ns
30
-
13
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM
p - n junction diode
D
G
S
-
-
3.1
A
-
-
12
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.1 A, VGS = 0 V b
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
-
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b
-
270
600
ns
1.4
3.0
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
S14-2355-Rev. E, 08-Dec-14
2
Document Number: 91273
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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