SIHFR9120 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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SIHFR9120 Datasheet PDF : 7 Pages
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 5.6
A
-
-
- 22
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 5.6 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
trr
-
TJ = 25 °C, IF = - 6.8 A, dI/dt = 100 A/µsb
100
200
ns
Qrr
-
0.33 0.66 µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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