IRFZ46NSTRL 데이터 시트보기 (PDF) - International Rectifier

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IRFZ46NSTRL

HEXFET Power MOSFET

International Rectifier 

IRFZ46NS/IRFZ46NL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID =1mA…

RDS(on)

Static Drain-to-Source On-Resistance ––– ––– .0165 Ω VGS =10V, ID = 28A „

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

19 ––– ––– S VDS = 25V, ID = 28A„…

IDSS

Drain-to-Source Leakage Current

––– ––– 25 µA VDS = 55V, VGS = 0V

––– ––– 250

VDS = 44V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 n A VGS = 20V

––– ––– -100

VGS = -20V

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

––– ––– 72

––– ––– 11

ID = 28A

nC VDS = 44V

Qgd

td(on)

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

––– ––– 26

––– 14 –––

VGS = 10V, See Fig. 6 and 13 „…

VDD = 28V

tr

td(off)

Rise Time

Turn-Off Delay Time

–––

–––

76 –––

52 –––

ns

ID = 28A

RG = 12Ω

tf

Fall Time

LS

Internal Source Inductance

––– 57 –––

RD = 0.98Ω, See Fig. 10„…

–––

7.5 –––

nH

Between lead,

and center of die contact

Ciss

Input Capacitance

––– 1696 –––

VGS = 0V

Coss

Crss

EAS

Output Capacitance

Reverse Transfer Capacitance

Single Pulse Avalanche Energy ‚

––– 407 ––– pF

––– 110 –––

––– 583†152‡

VDS = 25V

ƒ = 1.0MHz, See Fig. 5…

IAS = 28A, L = 389mH

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

I SM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 53

A showing the

integral reverse

G

––– ––– 180

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „

––– 67 101 ns TJ = 25°C, IF = 28A

––– 208 312 nC di/dt = 100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 389µH

RG = 25Ω, IAS = 28A. (See Figure 12)

ƒ ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

… Uses IRFZ46N data and test conditions.

† This is a typical value at device destruction and represents

operation outside rated limits.

‡ This is a calculated value limited to TJ = 175°C.

ˆ Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 39A.

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

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