IRGB4055PBF 데이터 시트보기 (PDF) - International Rectifier
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IRGB4055PBF Datasheet PDF : 10 Pages
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IRGB/S4055PbF
100000
10000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
16
IC = 35A
14
12
10
200V
240V
1000
8
6
Coes
4
100
Cres
2
10
0
50
100
150
200
VCE, Collector-toEmitter-Voltage(V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
0
0 25 50 75 100 125 150
Q G, Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.00773
0.05408
τi (sec)
0.000009
0.000120
τ4 τ4
0.23564 0.002452
Ci= τi/Ri
Ci i/Ri
0.20216 0.022464
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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