IRH8450 데이터 시트보기 (PDF) - International Rectifier

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IRH8450

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRH7450, IRH8450 Devices

Post-Irradiation

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 8a. Gate Stress of VGSS

Equals 12 Volts During

Radiation

Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals

of Rad Hard HEXFET During

80% of BVDSS During Radiation

1x1012 Rad (Si)/Sec Exposure

Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

www.irf.com

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