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IS25F011A

1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

Integrated Silicon Solution 

IISS252F501F1A011A

IIISSS22552FF50024F11AA021A

IS25F041A

ISSISISI®®

1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES

WITH 4-PIN SPI INTERFACE

1 PRELIMINARY

JUNE 1998

FEATURES

• Flash Storage for Resource-Limited Systems

– Ideal for portable/mobile and microcontroller-based

applications that store voice, text, and data

• NexFLASH TM Serial Flash Memory

– Patented single transistor EEPROM memory

– High-density, low-voltage/power, cost-effective

– Small 264-byte sectors

– 10K/100K write cycles, ten years data retention

• Ultra-low Power for Battery-Operation

– Single 5V or 3V supply for read and erase/write

– < 1 µA standby current, 5 mA active @ 3V (typical)

– Low frequency read command for very low power

– No pre-erase. Erase/Write time of 5 ms/sector

@ 5V, ensures efficient battery use

2

• 4-pin SPI Serial Interface

– Easily interfaces to popular microcontrollers

– Clock operation as fast as 16 MHz

3

• On-chip Serial SRAM

– Dual 264-byte Read/Write SRAM buffers

– Use in conjunction with or independent of Flash

– Off-loads RAM-limited microcontrollers

4

• Special Features for Media-Storage Applications

– Byte-level addressing

5 – Transfer or compare sector to SRAM

– Versatile hardware and software write-protection

– Alternate oscillator frequency for EMI sensitive

applications.

– In-system electronic part number identification

– Removable Serial Flash Module package option

6

– SFK-SPI Serial Flash Development Kit

7

DESCRIPTION

The IS25F011A, IS25F021A, and IS25F041A Serial Flash

memories provide a storage solution for systems limited in

power, pins, space, hardware, and firmware resources.

They are ideal for applications that store voice, text, and

data in a portable or mobile environment. Using ISSI's

patented single transistor EEPROM cell, the devices offer

a high-density, low-voltage, low-power, and cost-effective

nonvolatile memory solution. The devices operate on a

single 5V or 3V (2.7V-3.6V) supply for Read and

Erase/Write with typical current consumption as low as

5 mA active and less than 1 µA standby. Sector erase/write

speeds as fast as 5 ms increase system performance,

minimize power-on time, and maximize battery life.

8

9 The IS25F011A, IS25F021A, and IS25F041A provide

1M-bit, 2M-bit, and 4M-bit of flash memory organized as

512, 1024, or 2048 sectors of 264 bytes each. Each sector

10 is individually addressable serial-clocked commands. The

4-pin SPI serial interface works directly with popular

microcontrollers. Special features include: on-chip serial

SRAM, byte-level addressing, double-buffered sector writes,

transfer/compare sector to SRAM, hardware and software

11 write protection, alternate oscillator frequency, electronic

part number, and removable Serial Flash Module package

option. Development is supported with the PC-based

SFK-SPI Serial Flash Development Kit.

12

This document contains PRELIMINARY INFORMATION. ISSI reserves the right to make changes to its product at any time without notice in order to improve design and supply the best possible

product. We assume no responsibility for any errors which may appear in this publication.  Copyright 1998, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc.

1

PRELIMINARY SF001-1A

06/24/98

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