MT4LC4M16F5TG-5 데이터 시트보기 (PDF) - Micron Technology
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MT4LC4M16F5TG-5 Datasheet PDF : 19 Pages
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4 MEG x 16
FPM DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 13) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
tRAS
tRASP
tRC
tRCD
tRCH
tRCS
tREF
tRP
tRPC
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWP
tWRH
tWRP
MIN
50
50
90
18
0
0
30
0
0
13
131
73
13
2
8
40
0
8
10
10
-5
MAX
10,000
125,000
64
50
MIN
60
60
110
20
0
0
40
0
0
15
155
85
15
2
10
45
0
10
10
10
-6
MAX
10,000
125,000
64
50
UNITS
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
14, 26
16, 27
26
22
16
35
18
35
18, 26
4 Meg x 16 FPM DRAM
D28_2.p65 – Rev. 5/00
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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