IS41LV16256B 데이터 시트보기 (PDF) - Integrated Silicon Solution
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IS41LV16256B Datasheet PDF : 22 Pages
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IS41LV16256B
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
VDD
IOUT
PD
TA
TSTG
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Storage Temperature
3.3V -0.5 to 4.6
V
3.3V -0.5 to 4.6
V
50
mA
1
W
0 to +70
°C
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
ISSI ®
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VDD
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
3.3V
3.3V
3.3V
Min. Typ.
Max.
Unit
3.0 3.3
3.6
V
2.0 — VDD + 0.3 V
–0.3 —
0.8
V
0
—
+70
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
CIN1
Input Capacitance: A0-A8
5
CIN2
Input Capacitance: RAS, UCAS, LCAS, WE, OE
7
CIO
Data Input/Output Capacitance: I/O0-I/O15
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. B
04/28/05
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