IS42S16400C1 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS42S16400C1

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution 

IS42S16400C1

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VDD MAX

VDDQ MAX

VIN

VOUT

PD MAX

ICS

TOPR

TSTG

Parameters

Maximum Supply Voltage

Maximum Supply Voltage for Output Buffer

Input Voltage

Output Voltage

Allowable Power Dissipation

Output Shorted Current

Operating Temperature

Com.

Ind.

Storage Temperature

Rating

Unit

–0.5 to +4.6

V

–0.5 to +4.6

V

–0.5 to VDDQ + 0.5 V

–1.0 to VDDQ + 0.5 V

1

W

50

mA

0 to +70

°C

–40 to +85

–65 to +150

°C

ISSI ®

DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)

Symbol

VDD, VDDQ

VIH

VIL

Parameter

Supply Voltage

Input High Voltage(3)

Input Low Voltage(4)

Min.

3.0

2.0

-0.3

Typ.

Max.

Unit

3.3

3.6

V

— VDD + 0.3

V

—

+0.8

V

CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)

Symbol Parameter

Typ. Max. Unit

CIN

CCLK

CI/O

Input Capacitance: Address and Control

Input Capacitance: (CLK)

Data Input/Output Capacitance: I/O0-I/O15

—

3.8

pF

—

3.5

pF

—

6.5

pF

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

2. All voltages are referenced to GND.

3. VIH(max) = VDDQ + 2.0V with a pulse width < 3ns.

4. VIL(min) = GND - 2.0V with a pulse width < 3ns.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

11

Rev. E

10/25/05

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