IS61C64AL 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61C64AL

8K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C64AL

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

VTERM Terminal Voltage with Respect to GND

Value

Unit

–0.5 to +7.0

V

1

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.5

W

IOUT

DC Output Current (LOW)

20

mA

2

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for

3

extended periods may affect reliability.

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to +70°C

Industrial

–40°C to +85°C

Note:

1. If operated at 12ns, VDD range is 5V + 10%.

Speed

-10

-10

VDD(1)

5V ± 5%

5V ± 5%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage(1)

ILI

Input Leakage

Test Conditions

VDD = Min., IOH = –4.0 mA

VDD = Min., IOL = 8.0 mA

GND ≤ VIN ≤ VDD

ILO

Output Leakage

GND ≤ VOUT ≤ VDD,

Outputs Disabled

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

4

5

6

Min.

Max.

Unit

2.4

—

V7

—

0.4

V

2.2 VDD + 0.5 V

–0.3

0.8

V8

Com. –1

1

µA

Ind. –2

2

Com. –1

Ind. –2

1

2

9 µA

10

11

12

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. A

03/16/06

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