IS61C64AL 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61C64AL

8K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C64AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter

Test Condition

VDR VDDforDataRetention

See Data Retention Waveform

IDR

Data Retention Current

VDD = 2.0V, CE ≥ VDD – 0.2V

VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V

tSDR DataRetentionSetupTime SeeDataRetentionWaveform

tRDR RecoveryTime

See Data Retention Waveform

Note:

1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.

Com.

Ind.

DATA RETENTION WAVEFORM (CE Controlled)

VDD

4.5V

tSDR

Data Retention Mode

2.2V

VDR

CE

GND

CE ≥ VDD - 0.2V

ISSI ®

1 Min. Typ.(1) Max. Unit

2.0

5.5 V

— 50

90 µA

—

0

2 100

— ns

tRC

— ns

3

4

tRDR

5

6

7

8

9

10

11

12

Integrated Silicon Solution, Inc. — 1-800-379-4774

9

Rev. A

03/16/06

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