IS61LV256AL(2006) 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61LV256AL
(Rev.:2006)

32K x 8 LOW VOLTAGE CMOS STATIC RAM

Integrated Silicon Solution 

IS61LV256AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter

Test Condition

VDR VDDforDataRetention

See Data Retention Waveform

IDR

Data Retention Current

VDD = 2.0V, CE ≥ VDD – 0.2V

VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V

tSDR DataRetentionSetupTime SeeDataRetentionWaveform

tRDR RecoveryTime

See Data Retention Waveform

Note:

1. Typical Values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.

Com.

Ind.

DATA RETENTION WAVEFORM (CE Controlled)

VDD

tSDR

Data Retention Mode

VDR

CE

GND

CE ≥ VDD - 0.2V

ISSI ®

Min. Typ.(1)

2.0

—

2

——

0

tRC

Max. Unit

3.6 V

40 µA

50

— ns

— ns

tRDR

Integrated Silicon Solution, Inc. — 1-800-379-4774

9

Rev. A

03/17/06

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