IS62C1024L 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62C1024L

128K x 8 LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62C1024L

ISSI ®

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter

Test Condition

Min.

Typ.

Max.

Unit

VDR

VDD for Data Retention

See Data Retention Waveform

2.0

5.5

V

IDR

Data Retention Current

VDD = 3.0V, CE1 ≥ VDD – 0.2V

Com. —

Ind. —

45

250

µA

60

400

tSDR

DataRetentionSetupTime SeeDataRetentionWaveform

0

—

ns

tRDR

Recovery Time

See Data Retention Waveform

tRC

—

ns

DATA RETENTION WAVEFORM (CE1 Controlled)

VDD

4.5V

tSDR

Data Retention Mode

tRDR

2.2V

VDR

CE1

GND

CE1 ≥ VDD - 0.2V

DATA RETENTION WAVEFORM (CE2 Controlled)

Data Retention Mode

VDD

4.5V

CE2

2.2V

VDR

0.4V

GND

tSDR

CE2 ≤ 0.2V

tRDR

8

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. E

11/26/03

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