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ISC5804AT2F 데이터 시트보기 (PDF) - Isahaya Electronics

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ISC5804AT2F Datasheet PDF : 3 Pages
1 2 3
DESCRIPTION
2SC5804 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
Complementary with 2SC3052.
FEATURE
●Super-thin flat lead type package. t=0.45mm
●Excellent linearly of DC forward current gain.
●Low collector to emitter saturation voltage
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)
OUTLINE DRAWING
Transistor
ISC5804AT2
Low frequency Application
Silicon NPN Epitaxial Type
Unit:mm
0.2±0.05
1.21±0.1
0.81±0.1
0.2±0.05
APPLICATION
For hybrid IC,small type machine low frequency voltage
amplify application.
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING UNIT
VCBO Collector to Base voltage
50
V
VEBO Emitter to Base voltage
6
V
VCEO Collector to Emitter voltage
50
V
IC Collector current
150
mA
PC Collector
dissipation(Ta=25℃)
Tj
Junction temperature
150(*)
mW
+125
Tstg
Storage temperature
-55~+
125
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
※The dimension tolerance is reference value.
JEITA:
Terminal Connector
①:Base
②:Emitter
③:Collector
Equivalent circuit
Type name hFE Item
J
I
H
A BC DE F
G
ELECTRICAL CHARACTERISTICS (Ta=25℃)
A~F running No.
G~J Month of Manufacture
SYMBOL
PARAMETER
TEST CONDITION
LIMIT
MIN TYP MIN
UNIT
TYP
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
※ It shows hFE classification in below table.
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
IC=100μA, R BE=∞
V CB=50V, I E=0mA
V EB=6V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
IC=100mA, I B=10mA
V CE=6V, I E=-10mA
V CB=6V, I E=0mA,f=1MHz
V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
50
V
-
-
0.1 μA
-
-
0.1 μA
150
800
-
90
-
-
-
-
-
0.3
v
-
200
-
MHz
-
2.5
-
pF
-
-
15
dB
Item
E
F
G
hFE
150~300 250~500 400~800
ISAHAYA ELECTRONICS CORPORATION

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