NX26F011A-3V-R 데이터 시트보기 (PDF) - NexFlash -> Winbond Electronics

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NX26F011A-3V-R

1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE

NexFlash -> Winbond Electronics 

NX26F011A

NX26F041A

AC ELECTRICAL CHARACTERISTICS

Symbol

tCP

tCL, tCH

tCR

tCF

tDS

tDH

tDV

tRESET

tRP

tWP

Description

SCK Serial Clock Period

SCK Serial Clock High or Low Time

SCK Serial Clock Rise Time(1)

SCK Serial Clock Fall Time(1)

SIO Setup Time to SCK Rising Edge

SIO Hold Time From SCK Rising Edge

SIO Valid after SCK(2)

SCK Low Duration for

Valid Reset or Standby (See Figures 9 & 10)

Read Pre-data Delay (See Figure 9)

Erase/Write Program Time(3) (See Figure 10)

5V (16 MHz)

Min Typ Max

62 — —

26 — —

—— 7

—— 7

40 — —

0 ——

— — 60

1.5 — 5

30 — —

—3 5

3V (8 MHz)

Min Typ Max

125 — —

57 — —

— —5

— —5

100 — —

0 ——

— — 115

3 — 10

100 — —

— 5 10

1 Unit

ns

ns

2 ns

ns

ns

ns

3 ns

µs

4 µs

ms

Notes:

1. Test points are 10% and 90% points for rise/fall times. All other timings are measured at the 50% point.

2. With 50 pF (8 MHz) or 30 pF (16 MHz) load SIO to GND.

5

3. The NX26F011A and NX26F041A are designed for Erase/Write endurances of 10K cycles. Endurance in the range of 100K

cycles can be obtained using ECC software methods like those provided in the SFK Serial Flash Development Kit.

6

7

CLOCK AND DATA TIMING

8

9

tCP

tCH

tCL

tCF

tCR

SCK

10

tDV

tDV

tDS

tDH

SIO

Read

Write

11

12

NexFlash Technologies, Inc.

11

PRELIMINARY NXSF009A-0599

05/05/99 ©

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