NX26F011A-3V-R 데이터 시트보기 (PDF) - NexFlash -> Winbond Electronics
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NX26F011A-3V-R
NexFlash -> Winbond Electronics
NX26F011A-3V-R Datasheet PDF : 14 Pages
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NX26F011A
NX26F041A
NX26F011A or
NX26F011A or
NX26F011A or
NX26F011A or
NX26F041A
NX26F041A
NX26F041A
NX26F041A
U0
U1
U2
U3
1
0 A0
0 A1
0 A2
0 A3
1 A0
0 A1
0 A2
0 A3
0 A0
1 A1
0 A2
0 A3
1 A0
1 A1
0 A2
0 A3
....
2
SCK
3
SIO
4
0 A0
0 A1
0 A2
1 A3
1 A0
0 A1
0 A2
1 A3
0 A0
1 A1
0 A2
1 A3
1 A0
1 A1
0 A2
1 A3
.... 5
NX26F011A or
NX26F041A
NX26F011A or
NX26F041A
NX26F011A or
NX26F041A
NX26F011A or
NX26F041A
6
U8
U9
U10
U11
7 Figure 2. NX26F011A or NX26F041A Used in a Multi-device Configuration with up to 16-Devices on the 2-wire NSX
FUNCTIONAL OVERVIEW
The NexFlash NX26F011A and NX26F041A provide up to
1M-bits or 4M-bits of non-volatile memory organized as 512
or 2,048 small sectors of 264 bytes (4,288 bits) each (Figure
3). Each sector is individually addressable using basic
instruction sequences and control functions communicated
through the devices 2-wire NXS interface.
Read and Erase/Write Instruction Sequences
The NX26F011A and NX26F041A have two basic instruc-
tion sequences: Read and Erase/Write. Unlike some other
Flash technologies, the erase and write operations of the
NX26F011A and NX26F041A are performed together in
one single operation (as fast as 5 ms per sector). Thus,
pre-erase of the memory is not necessary.
Both Read and Erase/Write instructions are made up of a
series of serial bit fields that include command, sector
address, device address, and sector data. The Read
instruction sequence also allows the device to be polled for
Ready/Busy status.
Sector 0 (0000H)
2112 Bits (264 Bytes) Per Sector
8
Sector 1 (0001H)
Sector 2 (0002H)
9
10
Sectors 3-2045/4093
(0003-1FD/7FD)
11
Sector 510/2046 (1FE/1FE)
12
Sector 511/2047 (1FF/7FF)
Figure 3. NX26F011A and NX26F041A Array
NexFlash Technologies, Inc.
3
PRELIMINARY NXSF009A-0599
05/05/99 ©
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