ISL9R1560S2(2013) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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ISL9R1560S2 Datasheet PDF : 10 Pages
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Symbol
Parameter
Ratings
Unit
PD
EAVL
TJ, TSTG
TL
TPKG
Power Dissipation
Avalanche Energy (1 A, 40 mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
150
W
20
mJ
-55 to 175
°C
300
°C
260
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size
ISL9R1560G2 ISL9R1560G2 TO-247-2L
Tube
N/A
ISL9R1560P2 ISL9R1560P2 TO-220AC-2L
Tube
N/A
ISL9R1560S2 ISL9R1560S2 TO-262(I2-PAK)
Tube
N/A
ISL9R1560S3ST ISL9R1560S3S TO-263(D2-PAK)
Reel
13" dia
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Tape Width Quantity
N/A
30
N/A
50
N/A
50
24mm
800
Min Typ Max Unit
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600 V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 15 A
TC = 25°C
TC = 125°C
- 1.8 2.2 V
- 1.65 2.0 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10 V, IF = 0 A
-
62
-
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
Irr
Qrr
trr
S
Irr
Qrr
trr
S
Irr
Qrr
diM/dt
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1 A, diF/dt = 100 A/µs, VR = 30 V -
IF=15 A, diF/dt = 100 A/µs, VR = 30 V -
IF = 15 A,
-
diF/dt = 200 A/µs,
-
VR = 390 V, TC = 25°C
-
IF = 15 A,
-
diF/dt = 200 A/µs,
-
VR = 390 V,
-
TC = 125°C
-
IF = 15 A,
-
diF/dt = 800 A/µs,
-
VR = 390 V,
-
TC = 125°C
-
-
25 30 ns
35 40 ns
29.4 -
ns
3.5 -
A
57
-
nC
90
-
ns
2.0 -
5.0 -
A
275
-
nC
52
-
ns
1.36 -
13.5 -
A
390
-
nC
800 - A/µs
Thermal Characteristics
RθJC
RθJA
RθJA
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-262
Thermal Resistance Junction to Ambient TO-263
-
- 1.0 °C/W
-
-
30 °C/W
-
-
62 °C/W
-
-
62 °C/W
-
-
62 °C/W
©2001 Fairchild Semiconductor Corporation
2
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com
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