ISP824 데이터 시트보기 (PDF) - Unspecified
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ISP824 Datasheet PDF : 3 Pages
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
35V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V )
F
1.2 1.4 V
I = ± 20mA
F
Output
Collector-emitter Breakdown (BVCEO) 35
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP814, ISP824, ISP844
20
ISP814A, ISP824A, ISP844A
50
Collector-emitter Saturation VoltageVCE (SAT)
V
V
100 nA
300 %
150 %
0.2 V
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
4
Output Fall Time tf
3
VRMS
VPK
Ω
18 µs
18 µs
IC = 1mA
I
E
=
100µA
VCE = 20V
± 1mAIF , 5V VCE
± 20mAIF , 1mAIC
See note 1
See note 1
VIO = 500V (note 1)
V = 2V ,
CE
IC= 10mA, RL= 100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
3/11/99
DB91070M-AAS/A1
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