IXFP16N50P 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFP16N50P Datasheet PDF : 4 Pages
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Fig. 7. Transconductance
28
TJ = - 40ºC
24
20
25ºC
16
125ºC
12
8
4
0
0
2
4
6
8
10
12
14
16
18
20
ID - Amperes
IXFA16N50P IXFP16N50P
IXFH16N50P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
70
60
50
40
30
20
TJ = 125ºC
10
TJ = 25ºC
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VSD - Volts
1.1
1.2
10
9
VDS = 250V
I D = 8A
8
I G = 10mA
7
Fig. 9. Gate Charge
10,000
1,000
Fig. 10. Capacitance
Ciss
6
5
100
Coss
4
3
2
10
Crss
1
0
0
5
10
15
20
25
30
35
40
45
QG - NanoCoulombs
f = 1 MHz
1
0
5
10
15
20
25
30
35
40
VDS - Volts
Fig. 11. Forward-Bias Safe Operating Area
100
Fig. 12. Maximum Transient Thermal Impedance
1.00
RDS(on) Limit
25µs
10
0.10
100µs
TJ = 150ºC
TC = 25ºC
Single Pulse
1ms
10ms
DC
1
10
100
VDS - Volts
1000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS REF: F_16N50P(5J-745)5-1-09-C
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