DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXGH12N60C 데이터 시트보기 (PDF) - IXYS CORPORATION

부품명
상세내역
제조사
IXGH12N60C
IXYS
IXYS CORPORATION IXYS
IXGH12N60C Datasheet PDF : 2 Pages
1 2
HiPerFASTTM IGBT
LightspeedTM Series
IXGH 12N60C
VCES = 600 V
IC25 = 24 A
VCE(sat) = 2.7 V
tfi(typ) = 55 ns
Symbol
Test Conditions
VCES
VCGR
V
GES
VGEM
I
C25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 33
Clamped inductive load, L = 300 µH
PC
TC = 25°C
TJ
T
JM
Tstg
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
24
A
12
A
48
A
ICM = 24
A
@ 0.8 VCES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
6
g
300
°C
TO-247
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
Very high frequency IGBT
New generation HDMOSTM process
Internationalstandardpackage
JEDEC TO-247
High peak current handling capability
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VGE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = ICE90, VGE = 15 V
TJ = 25°C
TJ = 125°C
600
V
2.5
5.0 V
200 µA
1.5 mA
±100 nA
2.1 2.7 V
Applications
PFCcircuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
Fast switching speed
High power density
© 2002 IXYS All rights reserved
98503B (2/02)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]