IXGP30N60C3 데이터 시트보기 (PDF) - IXYS CORPORATION

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IXGP30N60C3

GenX™ 600V IGBT

IXYS CORPORATION 

GenX3TM 600V IGBT

High Speed PT IGBTs for

40-100kHz switching

IXGA30N60C3

IXGP30N60C3

IXGH30N60C3

VCES = 600V

IC110 = 30A

VCE(sat) ≤ 3.0V

tfi(typ) = 47ns

TO-263 (IXGA)

Symbol

VCES

VCGR

VGES

VGEM

IC25

IC110

ICM

SSOA

(RBSOA)

PC

TJ

TJM

Tstg

TL

TSOLD

Md

Weight

Test Conditions

TC = 25°C to 150°C

TJ = 25°C to 150°C, RGE = 1MΩ

Continuous

Transient

TC = 25°C

TC = 110°C

TC = 25°C, 1ms

VGE = 15V, TVJ = 125°C, RG = 5Ω

Clamped inductive load @ ≤ 600V

TC = 25°C

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

Mounting torque (TO-220 & TO-247)

TO-220

TO-263

TO-263

Maximum Ratings

600

V

600

V

± 20

V

± 30

V

60

A

30

A

150

A

ICM = 60

A

220

-55 ... +150

150

-55 ... +150

300

260

1.13/10

2.5

3.0

3.0

W

°C

°C

°C

°C

°C

Nm/lb.in.

g

g

g

Symbol Test Conditions

(TJ = 25°C unless otherwise specified)

BVCES

IC = 250μA, VGE = 0V

VGE(th)

IC = 250μA, VCE = VGE

ICES

VCE = VCES

VGE = 0V

TJ = 125°C

IGES

VCE = 0V, VGE = ± 20V

VCE(sat)

IC = 20A, VGE = 15V, Note 1

TJ = 125°C

Characteristic Values

Min. Typ. Max.

600

V

3.5

5.5 V

15 μA

300 μA

±100 nA

2.6 3.0 V

1.8

V

© 2008 IXYS CORPORATION, All rights reserved

G

E

TO-220 (IXGP)

C(TAB)

G

CE

TO-247 (IXGH)

C(TAB)

G

C

E

C (TAB)

G = Gate

C = Collector

E = Emitter TAB = Collector

Features

Optimized for low switching losses

Square RBSOA

International standard packages

Advantages

High power density

Low gate drive requirement

Applications

High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

DS100012A(11/08)

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