IXGP30N60C3 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXGP30N60C3 Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g
fs
IC = 20A, VCE = 10V, Note 1
Cies
Coes
VCE = 25V, VGE = 0V, f = 1MHz
Cres
Qg
Qge
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
RthJC
RthCS
TO-220
TO-247
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Characteristic Values
Min. Typ. Max.
TO-220 (IXGP) Outline
9
16
S
915
pF
78
pF
32
pF
38
nC
8
nC
17
nC
16
ns
26
ns
0.27
mJ
42 75 ns
47
ns
0.09 0.18 mJ
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
17
ns
28
ns
0.44
mJ
70
ns
90
ns
0.33
mJ
0.50
0.21
0.56 °C/W
°C/W
°C/W
TO-247 (IXGH) AD Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXGA) Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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