PTB20176 데이터 시트보기 (PDF) - Ericsson
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PTB20176 Datasheet PDF : 3 Pages
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PTB 20176
5 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20176 is a common emitter RF power transistor intended for 26
Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum
output power, it is specifically designed for class A or AB linear power
amplifier applications. Ion implantation, nitride surface passivation
and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
26 Volt, 1.85 GHz Characteristics
Class A/AB
Internally Matched
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
10
8
6
4
VCC = 26 V
2
ICQ = 30 mA
f = 1850 MHz
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
20176 LOT CODE
Package 20201
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
RθJC
Value
20
45
4.0
1
21
0.12
150
8.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
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