K4S561633F-N 데이터 시트보기 (PDF) - Samsung

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K4S561633F-N

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Samsung 

K4S561633F - X(Z)E/N/G/C/L/F

Mobile-SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Symbol

Test Condition

Version

-75 -1H -1L

Unit Note

Operating Current

(One Bank Active)

Burst length = 1

ICC1 tRC ≥ tRC(min)

IO = 0 mA

90

85

85 mA 1

Precharge Standby Current in ICC2P CKE ≤ VIL(max), tCC = 10ns

power-down mode

ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞

0.5

mA

0.5

Precharge Standby Current

ICC2N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

15

in non power-down mode

ICC2NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

10

mA

Active Standby Current

in power-down mode

ICC3P CKE ≤ VIL(max), tCC = 10ns

ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞

6

mA

6

Active Standby Current

ICC3N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

25

mA

in non power-down mode

(One Bank Active)

ICC3NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

25

mA

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

130 130 105 mA 1

Refresh Current

ICC5 tRC ≥ tRC(min)

185 185 165 mA 2

-E/C

-N/L

1500

800

4

uA

5

Self Refresh Current

ICC6 CKE ≤ 0.2V

Internal TCSR

Max 40 Max 85/70 °C 3

Full Array

550

-G/F

1/2 of Full Array

450

800

600

uA 6

1/4 of Full Array

400

470

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C

4. K4S561633F-X(Z)E/C**

5. K4S561633F-X(Z)N/L**

6. K4S561633F-X(Z)G/F**

7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

February 2004

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