K4X56163PE 데이터 시트보기 (PDF) - Samsung

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K4X56163PE

16M x16 Mobile DDR SDRAM

Samsung 

K4X56163PE-L(F)G

Mobile-DDR SDRAM

Internal Temperature Compensated Self Refresh (TCSR)

Note :

1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the

self refresh cycle automatically according to the two temperature range ; Max. 40 °C, Max. 85 °C.

2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.

Self Refresh Current (Icc 6)

Temperature Range

Unit

Full Array

1/2 Array

1/4 Array

Max. 40 °C

150

125

115

uA

Max. 85 °C

400

300

250

Partial Array Self Refresh (PASR )

Note :

1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.

2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full Array, 1/2 Array, 1/4 Array.

BA1=0 BA1=0

BA0=0 BA0=1

BA1=1 BA1=1

BA0=0 BA0=1

- Full Array

BA1=0 BA1=0

BA0=0 BA0=1

BA1=1 BA1=1

BA0=0 BA0=1

- 1/2 Array

BA1=0 BA1=0

BA0=0 BA0=1

BA1=1 BA1=1

BA0=0 BA0=1

- 1/4 Array

Partial Self Refresh Area

Figure.3 EMRS code and TCSR , PASR

9

March 2004

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