K4X51163PC 데이터 시트보기 (PDF) - Samsung

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K4X51163PC

32M x16 Mobile-DDR SDRAM

Samsung 

K4X51163PC - L(F)E/G

Mobile-DDR SDRAM

Internal Temperature Compensated Self Refresh (TCSR)

Note :

1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the

self refresh cycle automatically according to the three temperature ranges ; 45 °C and 85 °C.

2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.

3. It has +/- 5 °C tolerance.

Self Refresh Current (IDD6)

Temperature Range

-E

-G

Unit

Full Array 1/2 Array 1/4 Array Full Array 1/2 Array 1/4 Array

45 °C*3

85 °C

300

270

255

250

220

205

uA

600

500

450

500

400

350

Partial Array Self Refresh (PASR)

Note :

1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option.

2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.

BA1=0 BA1=0

BA0=0 BA0=1

BA1=1 BA1=1

BA0=0 BA0=1

- Full Array

BA1=0 BA1=0

BA0=0 BA0=1

BA1=1 BA1=1

BA0=0 BA0=1

- 1/2 Array

BA1=0 BA1=0

BA0=0 BA0=1

BA1=1 BA1=1

BA0=0 BA0=1

- 1/4 Array

Partial Self Refresh Area

Figure.4 EMRS code and TCSR , PASR

February 2006

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