K5L5628JTM 데이터 시트보기 (PDF) - Samsung

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K5L5628JTM

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

Samsung 

K5L5628JT(B)M

PPrreelliimmiinnaarryy

MCP MEMORY

Multi-Chip Package MEMORY

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

FEATURES

<Common>

• Handshaking Feature

• Operating Temperature : -30°C ~ 85°C

- Provides host system with minimum latency by monitoring

• Package : 115Ball FBGA Type - 8.0mm x 12.0mm

RDY

0.8mm ball pitch

• Erase Suspend/Resume

1.4mm (Max.) Thickness

• Program Suspend/Resume

<NOR Flash>

• Unlock Bypass Program/Erase

• Single Voltage, 1.7V to 1.95V for Read and Write operations • Hardware Reset (RESET)

• Organization

• Data Polling and Toggle Bits

- 16,772,216 x 16 bit ( Word Mode Only)

- Provides a software method of detecting the status of program

• Read While Program/Erase Operation

or erase completion

• Multiple Bank Architecture

• Endurance

- 16 Banks (16Mb Partition)

100K Program/Erase Cycles Minimum

• OTP Block : Extra 256Byte block

• Data Retention : 10 years

• Read Access Time (@ CL=30pF)

• Support Common Flash Memory Interface

- Asynchronous Random Access Time :

• Low Vcc Write Inhibit

90ns (54MHz) / 80ns (66MHz)

- Synchronous Random Access Time :

88.5ns (54MHz) / 70ns (66MHz)

- Burst Access Time :

14.5ns (54MHz) / 11ns (66MHz)

• Burst Length :

- Continuous Linear Burst

- Linear Burst : 8-word & 16-word with No-wrap & Wrap

• Block Architecture

- Eight 4Kword blocks and five hundreds eleven 32Kword

blocks

<UtRAM>

• Process Technology: CMOS

• Organization: 8M x16 bit

• Power Supply Voltage: VCC 2.5~2.7V, VCCQ 1.7~2.0V

• Three State Outputs

• Supports MRS (Mode Register Set)

• MRS control - MRS Pin Control

• Supports Power Saving modes - Partial Array Refresh mode

Internal TCSR

• Supports Driver Strength Optimization for system environment

power saving.

- Bank 0 contains eight 4 Kword blocks and thirty-one 32Kword • Supports Asynchronous 4-Page Read and Asynchronous Write

blocks

Operation

- Bank 1 ~ Bank 15 contain four hundred eighty 32Kword blocks • Supports Synchronous Burst Read and Synchronous Burst

• Reduce program time using the VPP

• Support Single & Quad word accelerate program

• Power Consumption (Typical value, CL=30pF)

- Burst Access Current : 30mA

- Program/Erase Current : 15mA

- Read While Program/Erase Current : 40mA

- Standby Mode/Auto Sleep Mode : 25uA

• Block Protection/Unprotection

- Using the software command sequence

- Last two boot blocks are protected by WP=VIL

Write Operation

• Synchronous Burst(Read/Write) Operation

- Supports 4 word / 8 word / 16 word and Full Page(256 word)

burst

- Supports Linear Burst type & Interleave Burst type

- Latency support : Latency 3 @ 52.9MHz(tCD 12ns)

- Supports Burst Read Suspend in No Clock toggling

- Supports Burst Write Data Masking by /UB & /LB pin control

- Supports WAIT pin function for indicating data availability.

• Max. Burst Clock Frequency : 52.9MHz

- All blocks are protected by VPP=VIL

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2

Revision 1.0

November 2004

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