K6E0808C1E-C 데이터 시트보기 (PDF) - Samsung
부품명
상세내역
제조사
K6E0808C1E-C Datasheet PDF : 9 Pages
| |||
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Value
0V to 3V
3ns
1.5V
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
255Ω
+5V
480Ω
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
255Ω
+5.0V
480Ω
5pF*
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
K6E0808C1E-10
Min
Max
10
-
-
10
-
10
-
5
3
-
0
-
0
5
0
5
3
-
0
-
-
10
* The above parameters are also guaranteed at industrial temperature range.
K6E0808C1E-12
Min
Max
12
-
-
12
-
12
-
6
3
-
0
-
0
6
0
6
3
-
0
-
-
12
K6E0808C1E-15
Min
Max
15
-
-
15
-
15
-
7
3
-
0
-
0
7
0
7
3
-
0
-
-
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-4-
Revision 2.0
Feburary 1999
Share Link: 