K6E0808C1E-C 데이터 시트보기 (PDF) - Samsung
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K6E0808C1E-C Datasheet PDF : 9 Pages
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K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
FUNCTIONAL DESCRIPTION
CS
WE
OE
H
X
X*
L
H
H
L
H
L
L
L
X
* X means Don′t Care.
Mode
Not Select
Output Disable
Read
Write
I/O Pin
High-Z
High-Z
DOUT
DIN
For Cisco
CMOS SRAM
Supply Current
ISB, ISB1
ICC
ICC
ICC
DATA RETENTION CHARACTERISTICS*(TA=0 to 70°C)
Parameter
VCC for Data Retention
Data Retention Current
Symbol
VDR
IDR
Test Condition
CS≥VCC-0.2V
VCC=3.0V, CS≥VCC-0.2V
VIN≥VCC-0.2V or VIN≤0.2V
Data Retention Set-Up Time
Recovery Time
tSDR
tRDR
See Data Retention
Wave form(below)
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-Ver only.
Min.
Typ.
Max.
Unit
2.0
-
5.5
V
-
-
0.5
mA
0
-
-
ns
5
-
-
ms
DATA RETENTION WAVE FORM
CS controlled
VCC
4.5V
tSDR
Data Retention Mode
tRDR
VIH
VDR
CS
GND
CS≥VCC - 0.2V
-8-
Revision 2.0
Feburary 1999
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