K6T4008U1C 데이터 시트보기 (PDF) - Samsung
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K6T4008U1C Datasheet PDF : 10 Pages
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K6T4008V1C, K6T4008U1C Family
CMOS SRAM
512K×8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology: TFT
• Organization: 512K×8
• Power Supply Voltage
K6T4008V1C Family: 3.0~3.6V
K6T4008U1C Family: 2.7~3.3V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0820F, 32-TSOP1-0813.4F
GENERAL DESCRIPTION
The K6T4008V1C and K6T4008U1C families are fabricated by
SAMSUNG′s advanced CMOS process technology. The fami-
lies support various operating temperature range and have var-
ious package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
Speed
K6T4008V1C-B
K6T4008U1C-B
Commercial(0~70°C)
K6T4008V1C-F
K6T4008U1C-F
Industrial(-40~85°C)
1. The paramerter is measured with 30pF test load.
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
701)/85ns
701)/85/100ns
701)/85ns
701)/85/100ns
Power Dissipation
Standby
(ISB1, Max)
Operating
(ICC2, Max)
PKG Type
15µA
20µA
30mA
32-SOP
32-TSOP2-F/R
32-TSOP1-F
32-sTSOP1-F
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
32-SOP
32-TSOP2
25
9 (Forward) 24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC 32
A15 31
A17 30
WE 29
A13 28
A8 27
A9 26
A11 25
OE 24
A10 23
CS 22
I/O8 21
I/O7 20
I/O6 19
I/O5 18
I/O4 17
1 A18
2 A16
3 A14
4 A12
5 A7
6 A6
32-TSOP2 7 A5
(Reverse) 8 A4
9 A3
10 A2
11 A1
12 A0
13 I/O1
14 I/O2
15 I/O3
16 VSS
A11 1
A9
2
A8 3
A13
4
WE
5
A17 6
A15
7
VCC
8
A18
9
A16 10
A14
11
A12 12
A7
13
A6
14
A5
15
A4 16
32-TSOP1
32-STSOP1
(Forward)
32 OE
31 A10
30 CS
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 VSS
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
Name Function
Name Function
A0~A18 Address Inputs
Vcc Power
WE Write Enable Input
Vss Ground
CS Chip Select Input I/O1~I/O8 Data Inputs/Outputs
OE Output Enable Input
A0
A1
A4
A5
A6
A7
A12
A14
A16
A18
I/O1
I/O8
Clk gen.
Precharge circuit.
Row
select
Memory array
1024 rows
512×8 columns
Data
cont
I/O Circuit
Column select
Data
cont
A2 A3 A8 A9 A10 A11 A13 A15 A17
CS
Control
WE logic
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
January 1999
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