K6X0808C1D 데이터 시트보기 (PDF) - Samsung
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K6X0808C1D Datasheet PDF : 9 Pages
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K6X0808C1D Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Industrial Product: TA=-40 to 85°C, Otherwise specified
Automotive Product: TA=-40 to 125°C, Otherwise specified
2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.
3. Undershoot: -3.0V in case of pulse width≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
4.5
0
2.2
-0.53)
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.52)
V
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1 -
1 µA
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc
-1 -
1 µA
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIH or VIL, Read
-
-
5 mA
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,
VIN≤0.2VIN≥Vcc -0.2V
-
-
7 mA
ICC2 Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL -
- 25 mA
Output low voltage
VOL IOL=2.1mA
-
- 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 -
-V
Standby Current(TTL)
ISB CS=VIH, Other inputs=VIH or VIL
-
- 0.4 mA
Standby Current (CMOS)
ISB1 CS≥Vcc-0.2V, Other inputs=0~Vcc
K6X0808C1D-F -
K6X0808C1D-Q -
- 15 µA
- 25 µA
4
Revision 1.0
December 2003
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