KDR331E 데이터 시트보기 (PDF) - KEC
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KDR331E Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
·Low Forward Voltage : VF=0.25(Typ.) @IF=5mA
·Small Package : ESM.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
VRM
Reverse Voltage
VR
Maximum (Peak) Forward Current
IFM
Average Forward Current
IO
Surge Current (10ms)
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
Operating Temperature Range
Topr
* : Unit Rating. Total Rating=Unit Rating×1.5
RATING
15
10
100 *
50 *
1*
100
125
-55～125
-40～100
UNIT
V
V
mA
mA
A
mW
℃
℃
℃
KDR331E
SCHOTTKY BARRIER TYPE DIODE
E
B
DIM MILLIMETERS
A
1.60+_ 0.10
2
D
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
ESM
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
VF(1)
VF(2)
VF(3)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=5mA
IF=50mA
VR=10V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.21
0.25
0.35
-
13
MAX.
-
0.30
0.50
20
40
UNIT
V
μA
pF
2000. 11. 3
Revision No : 0
1/2
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