KM416C1000C-L 데이터 시트보기 (PDF) - Samsung
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KM416C1000C-L Datasheet PDF : 34 Pages
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KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A11]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
Min
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
tRC
90
tRWC
133
tRAC
50
tCAC
15
tAA
25
tCLZ
0
tOFF
0
13
tT
3
50
tRP
30
tRAS
50
10K
tRSH
13
tCSH
50
tCAS
13
10K
tRCD
20
37
tRAD
15
25
tCRP
5
tASR
0
tRAH
10
tASC
0
tCAH
10
tRAL
25
Read command set-up time
tRCS
0
Read command hold time referenced to CAS tRCH
0
Read command hold time referenced to RAS tRRH
0
Write command hold time
tWCH
10
Write command pulse width
tWP
10
Write command to RAS lead time
tRWL
13
Write command to CAS lead time
tCWL
13
-6
Min
Max
110
155
60
15
30
0
0
15
3
50
40
60
10K
15
60
15
10K
20
45
15
30
5
0
10
0
10
30
0
0
0
10
10
15
15
Units Notes
ns
ns
ns
3,4,10
ns
3,4,5
ns
3,10
ns
3
ns
6
ns
2
ns
ns
ns
ns
ns
ns
4
ns
10
ns
ns
ns
ns
11
ns
11
ns
ns
ns
8
ns
8
ns
ns
ns
ns
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