KM416C1200CT 데이터 시트보기 (PDF) - Samsung

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KM416C1200CT

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Samsung 

KM416C1000C, KM416C1200C

KM416V1000C, KM416V1200C

13. tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.

14. tCWL is specified from W falling edge to the earlier CAS rising edge.

15. tCSR is referenced to the earlier CAS falling edge before RAS transition low.

16. tCHR is referenced to the later CAS rising edge after RAS transition low.

CMOS DRAM

RAS

LCAS

UCAS

tCSR

tCHR

17. tDS, tDH is independently specified for lower byte DQ(0-7), upper byte DQ(8-15)

18. If tRASS≥100us, then RAS precharge time must use tRPS instead of tRP.

19. For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed

within 64ms/16ms before and after self refresh, in order to meet refresh specification.

20. For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately

before and after self refresh in order to meet refresh specification.

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