KRA311E(1999) 데이터 시트보기 (PDF) - KEC
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KRA311E Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
E
KRA310E~KRA314E
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A
1.60+_ 0.10
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
-50
-50
-5
-100
UNIT
V
V
V
mA
ESM
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING
PC
100
Tj
150
Tstg
-55ᴕ150
UNIT
mW
ᴱ
ᴱ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
KRA310E
KRA311E
KRA312E
KRA313E
KRA314E
ICBO
IEBO
hFE
VCE(sat)
fT *
R1
TEST CONDITION
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1mA
IC=-10mA, IB=-0.5mA
VCE=-10V, IC=-5mA
MARK SPEC
TYPE
KRA310E
MARK
PK
KRA311E
PM
KRA312E
PN
KRA313E
PO
KRA314E
PP
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
-0.1
250
4.7
10
100
22
47
MAX.
-100
-100
-
-0.3
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
kή
Marking
Type Name
1999. 6. 8
Revision No : 0
1/2
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