KSB601 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSB601

PNP Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor 

KSB601

Low Frequency Power Amplifier

• Medium Speed Switching Industrial Use

• Complement to KSD560

1

TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (Ta=25°C)

PC

Collector Dissipation (TC=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty Cycle≤50%

- 100

V

- 100

V

-7

V

-5

A

-8

A

- 0.5

A

1.5

W

30

W

150

°C

- 55 ~ 150

°C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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