KSB601 데이터 시트보기 (PDF) - Fairchild Semiconductor
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KSB601 Datasheet PDF : 6 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage IC = - 3A, IB1 = - 3mA,
L = 1mH
VCEX(sus)1
Collector-Emitter Sustaining Voltage
IC = - 3A, IB1 = - IB2 = - 3mA
VBE(off) = 5V, L =180µH
Clamped
VCEX(sus)2
Collector-Emitter Sustaining Voltage
IC = - 6A, IB1 = - 12mA
IB2 = 3mA, VBE(off) = 5V
L = 180uH, Clamped
ICBO
ICER
Collector Cut-off Current
Collector Cut-off Current
ICEX1
ICEX2
Collector Cut-off Current
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
tON
Turn ON Time
tS
Storage
tF
Fall time
* Pulse Test: PW≤350µs, Duty Cycle≤2%
VCB = - 100V, IE = 0
VCE = - 100V, RBE = 51Ω
TC= 125°C
VCE = - 100V, VBE(off) = 1.5V
VCE = - 100V, VBE(off) = 1.5V
TC = 125°C
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 3A
VCE = - 2V, IC = - 5A
IC = - 3A, IB = - 3mA
IC = - 3A, IB = - 3mA
VCC = - 50V , IC = - 3A
IB1 = - IB2 = - 3mA
RL = 17Ω
Min.
-
100
-
100
-
100
2000
500
Typ. Max.
- 10
-1
- 10
-1
-3
15000
- 1.5
-2
0.5
1
1
Units
V
V
V
µA
mA
µA
mA
mA
V
V
µs
µs
µs
hFE Classification
Classification
hFE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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