KSC2331 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
KSC2331 Datasheet PDF : 3 Pages
| |||
KSC2331
NPN Epitaxial Silicon Transistor
December 2011
Features
• Low Frequency Amplifier & Medium Speed Switching
• Complement to KSA931
• High Collector-Base Voltage : VCBO=80V
• Collector Current : IC=700mA
• Collector Dissipation : PC=1W
1
TO-92L
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
80
60
8
700
1
150
-55 to 150
Units
V
V
V
mA
W
°C
°C
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
IC=100μA, IE=0
IC=10mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=2V, IC=50mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
Min.
80
60
8
40
Typ.
0.2
0.86
Max.
0.1
0.1
240
0.7
1.20
Units
V
V
V
μA
μA
V
V
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
© 2011 Fairchild Semiconductor Corporation
KSC2331 Rev. B0
1
www.fairchildsemi.com
Share Link: 