Typical Performance Characteristics
200
180
160
140
120
100
80
60
40
20
0
0
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
5 10 15 20 25 30 35 40 45 50 55
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
1
VBE(sat)
IC = 10 IB
0.1
VCE(sat)
0.01
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
1000
100
1. Ta = 25oC
2. *Single Pulse
*200ms
DC
10
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
240
VCE = 2V
200
160
120
80
40
0
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
100
VCE = 2V
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
Ta[oC], AMIBIENT TEMPERATURE
Figure 6. Power Derating
© 2011 Fairchild Semiconductor Corporation
KSC2331 Rev. B0
2
www.fairchildsemi.com