D5017 데이터 시트보기 (PDF) - Inchange Semiconductor
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D5017 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5017
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
tf
Fall Time
IC= 5A , IB1= 1A ; IB2= -2A
RL= 40Ω; VCC= 200V
MIN TYP. MAX UNIT
5.0
V
1.5
V
10 μA
1
mA
8
3
MHz
0.4 μs
isc Website：www.iscsemi.cn
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