L6235 데이터 시트보기 (PDF) - STMicroelectronics
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L6235 Datasheet PDF : 25 Pages
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L6235
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6235 integrates a Three-Phase Bridge, which
consists of 6 Power MOSFETs connected as shown
on the Block Diagram. Each Power MOS has an
RDS(ON) = 0.3Ω (typical value @25°C) with intrinsic
fast freewheeling diode. Switching patterns are gen-
erated by the PWM Current Controller and the Hall
Effect Sensor Decoding Logic (see relative para-
graphs). Cross conduction protection is implemented
by using a dead time (tDT = 1µs typical value) set by
internal timing circuit between the turn off and turn on
of two Power MOSFETs in one leg of a bridge.
Pins VSA and VSB MUST be connected together to
the supply voltage (VS).
Using N-Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped Supply
(VBOOT) is obtained through an internal oscillator and
few external components to realize a charge pump
circuit as shown in Figure 3. The oscillator output (pin
VCP) is a square wave at 600KHz (typically) with 10V
amplitude. Recommended values/part numbers for
the charge pump circuit are shown in Table1.
LOGIC INPUTS
Pins FWD/REV, BRAKE, EN, H1, H2 and H3 are TTL/
CMOS and µC compatible logic inputs. The internal
structure is shown in Figure 4. Typical value for turn-
ON and turn-OFF thresholds are respectively Vth(ON)
= 1.8V and Vth(OFF) = 1.3V.
Pin EN (enable) may be used to implement Overcurrent
and Thermal protection by connecting it to the open col-
lector DIAG output If the protection and an external dis-
able function are both desired, the appropriate
connection must be implemented. When the external
signal is from an open collector output, the circuit in Fig-
ure 5 can be used . For external circuits that are push
pull outputs the circuit in Figure 6 could be used. The re-
sistor REN should be chosen in the range from 2.2KΩ to
180KΩ. Recommended values for REN and CEN are re-
spectively 100KΩ and 5.6nF. More information for se-
lecting the values can be found in the Overcurrent
Protection section.
Figure 4. Logic Input Internal Structure
5V
Table 1. Charge Pump External Component
Values.
CBOOT
220nF
CP
10nF
RP
100Ω
D1
1N4148
D2
1N4148
Figure 3. Charge Pump Circuit
VS
D1
D2
CBOOT
RP
CP
VCP
VBOOT
VSA VSB
D01IN1328
ESD
PROTECTION
D01IN1329
Figure 5. Pin EN Open Collector Driving
OPEN
COLLECTOR
OUTPUT
5V
REN
CEN
DIAG
5V
EN
ESD
PROTECTION
D02IN1378
Figure 6. Pin EN Push-Pull Driving
PUSH-PULL
OUTPUT
REN
CEN
DIAG
5V
EN
ESD
PROTECTION
D02IN1379
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