L6370Q(2011) 데이터 시트보기 (PDF) - STMicroelectronics

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L6370Q
(Rev.:2011)

2.5 A single high-side smart power switch

STMicroelectronics 

L6370Q

Electrical specifications

2.3

Electrical characteristics

(VS = 24 V; TJ = –25 to +125°C, unless otherwise specified)

Table 5.

Symbol

Electrical characteristics

Parameter

Test condition

Min. Typ. Max. Unit

Vsmin

Supply voltage for valid

diagnostics

Idiag> 0.5mA; Vdg1= 1.5V

4

35

V

Vs

Iq

Vsth1

Supply voltage (operative)

Quiescent current

Iout = Ios = 0

Undervoltage threshold 1

Vil

Vih

(See Figure 4), Tamb = 0 to

+85°C

9.5

24

35

V

0.8

1.4

mA

3

4

8.5

9

9.5

V

Vsth2 Undervoltage threshold 2

8

8.5

9

V

Vsth3 Supply voltage hysteresis

300

500

700

mV

Isc Short circuit current

VS = 9.5 to 35V; RL= 2Ω 5kΩ<

RSC< 30kΩ

15/RSC(kΩ)

A

0< RSC< 5kΩ

2.6

3.2

4

A

Vdon Output voltage drop

Iout = 2.0A, Tj = 25°C

Tj = 125°C

Iout = 2.5A, Tj = 25°C

Tj = 125°C

200

280

mV

320

440

250

350

mV

400

550

Ioslk Output leakage current

Vi = Vil; Vo = 0V

500

μA

Vol Low state out voltage

Vi = Vil; RL = ∞

0.8

1.5

V

Internal voltage clamp

Vcl

(VS- VO)

IO = 1A

Single pulsed: Tp = 300 μs

48

53

58

V

Iold

Open load detection current

Vi = Vih; Tamb = 0 to +85 °C

1

3

6

mA

Vid

Common mode input voltage

range (operative)

VS = 18 to 35V

-7

15

V

Iib

Input bias current

Vith Input threshold voltage

Viths

Input threshold hysteresis

voltage

Vi = -7 to 15V; -In = 0V

V +In > V -In

V +In > V -In

-250

250

μA

0.8

1.4

2

V

50

400

mV

Rid Diff. input resistance

0 < +In < +16V; -In = 0V

-7 < +In < 0V; -In = 0V

400

KΩ

150

V +In = V -In

0V < Vi < 5.5V

+Ii

-20

+20

-Ii

-75

-25

Iilk

Input offset current

-In = GND

0V < V+In <5.5V

+Ii

+10

+50

μA

-Ii -250 -125

+In = GND

0V < V-In <5.5V

+Ii

-100

-30

-Ii

-50

-15

Doc ID 022313 Rev 1

7/16

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