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L6384E 데이터 시트보기 (PDF) - STMicroelectronics

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L6384E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6384E Datasheet PDF : 17 Pages
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L6384E
High-voltage half bridge driver
Features
High voltage rail up to 600V
dV/dt immunity ±50V/nsec in full temperature
range
Driver current capability:
– 400mA source,
– 650mA sink
Switching times 50/30 nsec rise/fall with 1nF
load
CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
Shut down input
Dead time setting
Under voltage lock out
Integrated bootstrap diode
Clamping on VCC
SO-8/DIP-8 packages
DIP-8
SO-8
Description
The L6384E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology. It has an Half - Bridge Driver structure
that enables to drive N-channel Power MOS or
IGBT. The High Side (Floating) Section is enabled
to work with voltage Rail up to 600V. The Logic
Inputs are CMOS/TTL compatible for ease of
interfacing with controlling devices. Matched
delays between Low and High Side Section
simplify high frequency operation. Dead time
setting can be readily accomplished by means of
an external resistor.
Figure 1. Block diagram
VCC
2
BOOTSTRAP DRIVER
UV
DETECTION
1
IN
VCC
Idt
DT/SD
3
Vthi
DEAD
TIME
LOGIC
8 VBOOT
H.V.
RS
LEVEL
SHIFTER
HVG
DRIVER
7
VCC
6
HVG
OUT
5 LVG
LVG
DRIVER
4 GND
CBOOT
LOAD
D97IN518A
October 2007
Rev 1
1/17
www.st.com
17

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