L78M15ABDT-TR(2012) 데이터 시트보기 (PDF) - STMicroelectronics
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L78M15ABDT-TR Datasheet PDF : 31 Pages
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Electrical characteristics
L78MxxAB, L78MxxAC
Refer to the test circuits, VI = 15 V, IO = 350 mA, CI = 0.33 µF, CO = 0.1 µF,
TJ = -40 to 125 °C (AB), TJ = 0 to 125 °C (AC) unless otherwise specified).
Table 7.
Symbol
Electrical characteristics of L78M09XX
Parameter
Test conditions
Min. Typ. Max. Unit
VO Output voltage
TJ = 25°C
8.82 9 9.18 V
VO Output voltage
IO = 5 to 350 mA, VI = 11.5 to 24 V
8.64 9 9.36 V
ΔVO Line regulation
VI = 11.5 to 25 V, IO = 200 mA,
TJ = 25°C
100
mV
VI = 12 to 25 V, IO = 200 mA, TJ = 25°C
30
) ΔVO
ct(s Id
du ΔId
Pro ΔVO/ΔT
te SVR
ole eN
bs Vd
- O Isc
Obsolete Product(s) Iscp
Load regulation
Quiescent current
Quiescent current change
Output voltage drift
Supply voltage rejection
Output noise voltage
Dropout voltage
Short circuit current
Short circuit peak current
IO = 5 to 500 mA, TJ = 25°C
IO = 5 to 200 mA, TJ = 25°C
TJ = 25°C
IO = 5 to 350 mA
IO = 200 mA, VI = 11.5 to 25 V
IO = 5 mA
VI = 12.5 to 23 V, f = 120Hz,
IO = 300mA, TJ = 25°C
B =10Hz to 100kHz, TJ = 25°C
TJ = 25°C
VI = 35 V, TJ = 25°C
TJ = 25°C
180
mV
90
6
mA
0.5
mA
0.8
-0.5
mV/°C
56
dB
52
µV
2
V
250
mA
700
mA
10/31
Doc ID 2147 Rev 13
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