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L78M12ABDT-TR(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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L78M12ABDT-TR
(Rev.:2012)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L78M12ABDT-TR Datasheet PDF : 31 Pages
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Electrical characteristics
L78MxxAB, L78MxxAC
Refer to the test circuits, VI = 11 V, IO = 350 mA, CI = 0.33 µF, CO = 0.1 µF,
TJ = -40 to 125 °C (AB), TJ = 0 to 125 °C (AC) unless otherwise specified.
Table 5.
Symbol
Electrical characteristics of L78M06XX
Parameter
Test conditions
Min. Typ. Max. Unit
VO Output voltage
TJ = 25°C
5.88 6 6.12 V
VO Output voltage
IO = 5 to 350 mA, VI = 8 to 21 V
5.75 6
6.3
V
ΔVO Line regulation
VI = 8 to 25 V, IO = 200 mA, TJ = 25°C
VI = 9 to 25 V, IO = 200 mA, TJ = 25°C
100
mV
30
) ΔVO Load regulation
IO = 5 to 500 mA, TJ = 25°C
IO = 5 to 200 mA, TJ = 25°C
120
mV
60
t(s Id
Quiescent current
TJ = 25°C
6
mA
uc ΔId
IO = 5 to 350 mA
Quiescent current change
d IO = 200 mA, VI = 9 to 25 V
0.5
mA
0.8
ro ΔVO/ΔT Output voltage drift
IO = 5 mA
-0.5
mV/°C
te P SVR Supply voltage rejection
VI = 9 to 19 V, f = 120Hz, IO = 300mA,
TJ = 25°C
59
dB
le eN Output noise voltage
B =10Hz to 100kHz
45
µV
so Vd Dropout voltage
TJ = 25°C
b Isc Short circuit current
TJ = 25°C, VI = 35 V
Obsolete Product(s) - O Iscp Short circuit peak current TJ = 25°C
2
V
270
mA
700
mA
8/31
Doc ID 2147 Rev 13

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