LH5164AV 데이터 시트보기 (PDF) - Sharp Electronics
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LH5164AV Datasheet PDF : 11 Pages
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LH5164AV
CMOS 64K (8K × 8) Static RAM
DC CHARACTERISTICS 1 (TA = –10°C to +70°C, VCC = 2.7 V to 5.5 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
Input leakage
current
ILI
VIN = 0 V to VCC
–1.0
Output leakage
current
ILO
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = 0 to VCC
Operating supply
current
CE1 = 0.2 V, VIN = 0.2 V, or
tCYCLE =
VCC – 0.2 V
200 ns
CE2 = VCC – 0.2 V,
Outputs open,
tCYCLE =
ICC
VCC = 2.7 V to 3.6 V
1.0 µs
CE1 = VIL, VIN = VIL or VIH
CE2 = VIH, Outputs open,
VCC = 4.5 V to 5.5 V
tCYCLE =
200 ns
tCYCLE =
1.0 µs
Standby current
ISB
CE2 ≤ 0.2 V or
CE1 ≥ VCC – 0.2 V
VCC = 2.7 V
to 3.6 V
VCC = 4.5 V
to 5.5 V
ISB1
CE1 = VIH or CE2 = VIL
Output voltage
VOL
IOL = 500 µA, VCC = 2.7 V to 3.6 V
IOL = 2.1 mA, VCC = 4.5 V to 5.5 V
VOH
IOH = –500 µA, VCC = 2.7 V to 3.6 V
IOH = –1.0 mA, VCC = 4.5 V to 5.5 V
NOTE:
1. CE2 should be ≥ VCC – 0.2 V or ≤0.2 V when CE1 ≥ VCC – 0.2 V.
–1.0
VCC –
0.5
2.4
MAX.
1.0
1.0
20
8
45
10
0.6
1.0
5
0.4
0.4
UNIT
µA
NOTE
µA
mA
µA
1
mA
V
V
4
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