LH5164AVH 데이터 시트보기 (PDF) - Sharp Electronics
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LH5164AVH Datasheet PDF : 10 Pages
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CMOS 64K (8K × 8) Static RAM
LH5164AVH
TRUTH TABLE
CE1
CE2
WE
H
X
X
X
L
X
L
H
L
L
H
H
L
H
H
NOTE:
1. X = H or L
OE
MODE
I/O1 - I/O8
SUPPLY CURRENT
NOTE
X
Standby
High-Z
Standby (ISB)
1
X
X
Write
Data input
Operating (ICC)
1
L
Read
Data output
Operating (ICC)
H
Output disable
High-Z
Operating (ICC)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Supply voltage
Input voltage
Operating temperature
VCC
VIN
Topr
–0.3 to +7.0
–0.3 to VCC +0.3
–40 to +85
Storage temperature
Tstg
–65 to +150
NOTES:
1. The maximum applicable voltage on any pin with respect to GND.
2. VIN (MIN.) = –3.0 V for pulse width ≤50 ns.
UNIT
V
V
°C
°C
NOTE
1
1, 2
RECOMMENDED OPERATING CONDITIONS (TA = –40°C to +85°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply voltage
VCC
3.0
3.3
3.6
V
Input voltage
VIH
VCC – 0.5
VIL
–0.3
VCC + 0.3
V
0.2
V
1
NOTE:
1. VIL (MIN.) = –3.0 V for pulse width ≤50 ns.
DC CHARACTERISTICS 1 (TA = –40°C to +85°C, VCC = 3.3 V ±0.3 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
Input leakage
current
ILI
VIN = 0 V to VCC
–1.0
Output leakage
current
Operating supply
current
CE1 = VIH or CE2 = VIL or
ILO
OE = VIH or WE = VIL
VI/O = 0 to VCC
CE1 = 0.2 V, VIN = 0.2 V, or
tCYCLE =
ICC
VCC – 0.2 V
CE2 = VCC – 0.2 V,
Outputs open
200 ns
tCYCLE =
1.0 µs
–1.0
Standby current
Output voltage
ISB
CE2 ≤ 0.2 V or
CE1 ≥ VCC – 0.2 V
TA ≤ +70°C
TA ≤ +85°C
ISB1
CE1 = VIH or CE2 = VIL
VOL
IOL = 500 µA
VOH
IOH = –500 µA
VCC –
0.5
NOTE:
1. CE2 should be ≥ VCC – 0.2 V or ≤0.2 V when CE1 ≥ VCC – 0.2 V.
MAX.
1.0
1.0
25
8
1.0
3.0
5
0.4
UNIT
µA
µA
mA
µA
mA
V
V
NOTE
1
3
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