LH5164AVH 데이터 시트보기 (PDF) - Sharp Electronics
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LH5164AVH Datasheet PDF : 10 Pages
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LH5164AVH
CMOS 64K (8K × 8) Static RAM
READ CYCLE (TA = –40°C to +85°C, VCC = 3.3 V ±0.3 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Read cycle time
tRC
200
ns
Address access time
tAA
200
ns
CE1 access time
tACE1
200
ns
CE2 access time
tACE2
200
ns
Output enable access time
tOE
150
ns
Output hold time
tOH
10
ns
CE1 Low to output in Low-Z
tLZ1
20
ns
CE2 High to output in Low-Z
tLZ2
20
ns
OE Low to output in Low-Z
tOLZ
10
ns
CE1 High to output in High-Z
tHZ1
0
60
ns
CE2 Low to output in High-Z
tHZ2
0
60
ns
OE High to output in High-Z
tOHZ
0
40
ns
WRITE CYCLE (TA = –40°C to +85°C, VCC = 3.3 V ±0.3 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Write cycle time
tWC
200
ns
CE Low to end of write
tCW
180
ns
Address valid to end of write
tAW
180
ns
Address setup time
tAS
0
ns
Write pulse width
tWP
150
ns
Write recovery time
tWR
0
ns
Input data setup time
tDW
100
ns
Input data hold time
tDH
0
ns
WE High to output in Low-Z
tOW
20
ns
WE Low to output in High-Z
tWZ
0
60
ns
OE High to output in High-Z
tOHZ
0
40
ns
TEST CONDITIONS
PARAMETER
MODE
Input pulse level
Input rise/fall time
0.2 V to VCC – 0.2 V
10 ns
Input/output timing level
1.5 V
Output load
CL (100 pF)
NOTE:
1. Includes scope and jig capacitance.
NOTE
1
CAPACITANCE 1 (TA = 25°C, f = 1 MHz)
PARAMETER
SYMBOL CONDITIONS MIN.
TYP.
Input capacitance
CIN
VIN = 0 V
I/O capacitance
CI/O
VI/O = 0 V
NOTE:
1. This parameter is sampled and not production tested.
MAX.
7
10
UNIT
pF
pF
4
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