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LM317L 데이터 시트보기 (PDF) - ON Semiconductor

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LM317L Datasheet PDF : 12 Pages
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LM317L, NCV317LB
MAXIMUM RATINGS
Rating
Input-Output Voltage Differential
Power Dissipation
Case 29 (TO-92)
TA = 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
VI-VO
Value
40
PD
RqJA
RqJC
Internally Limited
160
83
Unit
Vdc
W
°C/W
°C/W
Case 751 (SOIC-8) (Note 1)
TA = 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
PD
RqJA
RqJC
Internally Limited
180
45
W
°C/W
°C/W
Operating Junction Temperature Range
TJ
-40 to +150
°C
Storage Temperature Range
Tstg
-65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. SOIC-8 Junction-to-Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 24 for Thermal Resistance
variation versus pad size.
2. This device series contains ESD protection and exceeds the following tests:
Human Body Model, 2000 V per MIL STD 883, Method 3015.
Machine Model Method, 200 V.
Vin
300
300
300
3.0k 300
70
6.8V
6.8V
350
18k
8.67k
130
5.1k
200k
500
400
180 180
6.3V
2.0k
6.0k
10
p 10
Fp
F
60
2.4k
12.8k 50
Figure 1. Representative Schematic Diagram
2.5
Vout
Adjust
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